ABSOLUTE MAXIMUM RATINGS
Drain-source voltage, V DS
Gate-source voltage, V GS
Power dissipation
Operating temperature range SAL, PALpackages
Storage temperature range
Lead temperature, 10 seconds
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
OPERATING ELECTRICAL CHARACTERISTICS
T A = 25 ° C unless otherwise specified
10.6V
10.6V
500 mW
0 ° C to +70 ° C
-65 ° C to +150 ° C
+260 ° C
N - Channel
Test
P - Channel
Test
Parameter
Symbol
Min Typ Max
Unit
Conditions
Min Typ Max
Unit
Conditions
Gate Threshold V T
0.4
0.7
1.0
V
I DS = 1 μ A V GS = V DS
-0.4
-0.7 -1.0
V
I DS = -1 μ A V GS = V DS
Voltage
Gate Threshold
Temperature TC VT
-1.2
mV/ ° C
-1.3
mV/ ° C
Drift
On Drain
I DS (ON)
3
4.8
mA
V GS = V DS = 5V
-1.3
-2
mA
V GS = V DS = -5V
Current
Trans-.
G fs
1
1.8
mmho
V DS = 5V I DS = 10mA
0.25
0.67
mmho
V DS = -5V I DS = -10mA
conductance
Output
G OS
200
μ mho
V DS = 5V I DS = 10mA
40
μ mho
V DS = -5V I DS = -10mA
Conductance
Drain Source R DS(ON)
350
500
?
V DS = 0.1V V GS = 5V
1200
1800
?
V DS = -0.1V V GS = -5V
ON Resistance
Drain Source
BV DSS
10
V
I DS = 1 μ A V GS =0V
-10
V
I DS = -1 μ A V GS =0V
Breakdown
Voltage
Off Drain
Current
Gate Leakage
Current
Input
I DS(OFF)
I GSS
C ISS
10
0.1
1
400
4
30
1
3
pA
nA
pA
nA
pF
V DS =10V I GS = 0V
T A = 125 ° C
V DS = 0V V GS =10V
T A = 125 ° C
10
1
1
400
4
30
1
3
pA
nA
pA
nA
pF
V DS = -10V V GS = 0V
T A = 125 ° C
V DS = 0V V GS =-10V
T A = 125 ° C
Capacitance
ALD1115
Advanced Linear Devices
2 of 8
相关PDF资料
ALD1116SAL MOSFET 2N-CH 13.2V 4.8MA 8SOIC
ALD111933SAL MOSFET 2N-CH 10.6V 8SOIC
ALD114804APCL MOSFET N-CH 10.6V QUAD 16PDIP
ALD114835PCL MOSFET N-CH 10.6V QUAD 16PDIP
ALD114913SAL MOSFET N-CH 10.6V DUAL 8SOIC
ALNICO500 19X3.2X3.2MM MAGNET 19MM X 3.2 X 3.2
ALS-PD70-01C/TR7 IC IR AMBIENT LIGHT SENSOR
ALS-PDIC15-21C/L230/TR8 IC IR AMBIENT LIGHT SENSOR
相关代理商/技术参数
ALD1115PA 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:COMPLEMENTARY N-CHANNEL AND P-CHANNEL MOSFET
ALD1115PAL 功能描述:MOSFET Comp N-Channel & P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ALD1115SA 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:COMPLEMENTARY N-CHANNEL AND P-CHANNEL MOSFET
ALD1115SAL 功能描述:MOSFET Comp N-Channel & P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ALD1116 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED PAIR MOSFET
ALD1116DA 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:QUAD/DUAL N-CHANNEL MATCHED MOSFET ARRAY
ALD1116PA 功能描述:MOSFET Dual N-Channel Pair RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ALD1116PAL 功能描述:MOSFET Dual N-Channel Pair RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube